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We report the direct imaging of Be δ‐doped layers in GaAs, in the concentration range (0.5–2)×1014/cm2, comparing samples grown by gas source molecular beam epitaxy (MBE) and conventional MBE. The gas source MBE δ layers are ∼15 Å wide, and at least at high concentrations, consist of clusters ∼12 Å in diameter. At 2×1014 Be atoms/cm2, the MBE δ layer is an order of magnitude wider than that grown at the same temperature by gas source MBE. Our results imply that layers with Be concentrations in excess of 1021/cm3 can be fabricated by gas source MBE.