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Direct imaging of δ‐doped layers in GaAs

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5 Author(s)
Ourmazd, A. ; AT&T Bell Laboratories, Holmdel, New Jersey 07733 ; Cunningham, J. ; Jan, W. ; Rentschler, J.A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.103185 

We report the direct imaging of Be δ‐doped layers in GaAs, in the concentration range (0.5–2)×1014/cm2, comparing samples grown by gas source molecular beam epitaxy (MBE) and conventional MBE. The gas source MBE δ layers are ∼15 Å wide, and at least at high concentrations, consist of clusters ∼12 Å in diameter. At 2×1014 Be atoms/cm2, the MBE δ layer is an order of magnitude wider than that grown at the same temperature by gas source MBE. Our results imply that layers with Be concentrations in excess of 1021/cm3 can be fabricated by gas source MBE.

Published in:

Applied Physics Letters  (Volume:56 ,  Issue: 9 )

Date of Publication:

Feb 1990

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