By Topic

Dark current and diffusion length in InGaAs photodiodes grown on GaAs substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ishimura, E. ; Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, 4‐1, Mizuhara, Itami, Hyogo 664, Japan ; Kimura, T. ; Shiba, T. ; Mihashi, Y.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In0.53Ga0.47As photodiodes grown on GaAs substrates have been fabricated and analyzed. The dislocation density in the InGaAs layer is 2×107 cm-2. A lowest dark current of 3.8×10-4 A/cm2 at 10 V bias is obtained, which is very stable during a bias‐temperature test of Vb=-10 V, T=175 °C, and t=100 h. The quantum efficiency is more than 85% at λ=1.3 μm. This device is expected to be practically used. The dark current has been successfully explained by the thermionic emission and thermionic field emission from traps at midgap. The diffusion length of holes in the InGaAs layer is explained by the recombination at dislocations with the finite recombination velocity of S∼104 cm/s.

Published in:

Applied Physics Letters  (Volume:56 ,  Issue: 7 )