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We report on the first realization of extremely low resistivity regrown ohmic contacts to a variety of GaAs/AlGaAs structures using selective epitaxy. For planar regrown n+‐GaAs contacts to n‐GaAs we have obtained contact resistivity values ∼1×10-7 Ω cm2, and ∼1×10-8 Ω cm2 for lateral contacts to a 10‐nm‐thick buried n+‐GaAs layer. The contact resistances were substantially temperature independent from 77 to 300 K. Regrown contacts to a 2DEG structure exhibited a much higher and temperature‐dependent contact resisitivity which could be accounted for (according to numerical simulation) by ∼5×1012 cm-2 traps at the AlGaAs/ regrown GaAs interface. Post‐growth annealing of the regrown annealing of the regrown interface drastically reduced the value of contact resistivity for 2DEG structures to ∼2×10-8 Ω cm2.