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Trajectory domains in a wide‐well double‐barrier tunneling structure in crossed electric and magnetic fields

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6 Author(s)
Martin, K.P. ; School of Electrical Engineering and Microelectronics Research Center, Georgia Institute of Technology, Atlanta, Georgia 30332 ; Ben Amor, S. ; Rascol, J.J.L. ; Higgins, R.J.
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We report a study of transport in crossed electric and magnetic (B) fields in a double‐barrier tunneling structure with a wide (600 Å) well at T=1.5 K and 0≪B≪23 T. At B=0 we observe 21 resonances, 11 of which correspond to extended‐state resonances for biases ≫0.85 V. Under a transverse magnetic field, the bound resonances evolve into magnetoelectric states and are shifted to higher biases. In the low bias range, for high magnetic fields, additional resonances from barrier‐bound skipping states are observed. A semiclassical model for ballistic motion in crossed fields is used to determine boundaries between the different trajectory regimes (i.e., traversing, skipping, bulk‐like) in the magnetic field‐bias voltage space of the resonances. The model shows excellent quantitative agreement with experiment when nonparabolic corrections to the effective mass are included. In addition, the B‐induced shift in the transition from bound to extended‐state tunneling resonances is explained with this simple description.

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Applied Physics Letters  (Volume:56 ,  Issue: 18 )