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Planar stress relaxation in solid phase epitaxial CaF2 films grown on (111)Si by in situ rapid isothermal processing

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7 Author(s)
Singh, R. ; School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, Oklahoma 73019 ; Kumar, A. ; Thakur, R.P.S. ; Chou, P.
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Planar strain in CaF2 films on (111) Si substrate has been measured by an x‐ray double‐crystal diffraction technique using rocking curves. The films grown by a solid phase epitaxial approach using in situ rapid isothermal processing are almost free of tensile planar strain, and free from defects as observed by the transmission electron microscope diffraction pattern.

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Applied Physics Letters  (Volume:56 ,  Issue: 16 )