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Browse Journals & Magazines > Applied Physics Letters ...> Volume:56 Issue:14 Help

Epitaxial growth of CeO2 layers on silicon

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5 Author(s)
Inoue, T. ; Department of Electronic Engineering, College of Science and Engineering, Iwaki Meisei University, 5‐5‐1 Iino‐Chuodai, Iwaki, Fukushima 970, Japan ; Yamamoto, Y. ; Koyama, S. ; Suzuki, S.
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CeO2 layer was epitaxially grown for the first time on both (111) and (100) silicon substrates by vacuum evaporation. Characterization using Rutherford backscattering and reflection high‐energy electron diffraction proved that a CeO2 layer on (111) Si has considerably good crystalline quality, whereas that on (100)Si contains a large amount of crystallographic defects, especially in the vicinity of the CeO2/Si interface. Auger electron spectroscopy analysis showed a uniform concentration distribution of Ce and O throughout the epitaxial layer.

Published in:
Applied Physics Letters  (Volume:56 ,  Issue: 14 )

Date of Publication: Apr 1990

Page(s):
1332 - 1333
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.103202
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 1990

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