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Reduction of specific contact resistance on GaInAsP by rapid thermal process anneal

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4 Author(s)
Kanack, B. ; The University of Texas at Arlington, National Science Foundation, Center for Advanced Electron Devices, Arlington, Texas 76019 ; Carter, R.L. ; Appelbaum, A. ; Wolf, D.

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An order of magnitude improvement in the specific contact resistance of gold‐based ohmic contacts to p‐type GaInAsP (Eg=1.13 eV) is reported. A novel technique using a silicon susceptor has been employed in a rapid thermal processor. A direct comparison between gold‐based contacts annealed in a conventional furnace and the rapid thermal processor indicated a specific contact resistance of 4.2×10-5 and 4.1×10-6 Ω cm2, respectively. Auger electron spectroscopy, in depth profile mode, revealed two different metallurgical profiles for the conventional furnace and the rapid thermal processor. The rapid thermal processor was successfully implemented in a p‐i‐n optical detector process resulting in a reduction in the device series resistance and improved performance.

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Applied Physics Letters  (Volume:55 ,  Issue: 22 )