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Thin stacked oxide/nitride/oxide dielectrics formation by in situ multiple reactive rapid thermal processing

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3 Author(s)
Ting, W. ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 ; Lin, S.N. ; Kwong, D.L.

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Thin stacked SiO2/Si3N4/SiO2 (ONO) films have been fabricated for the first time using in situ multiple step rapid thermal processing chemical vapor deposition (RTP‐CVD). Stacked Si3N4/SiO2 (NO) layers were deposited in situ by RTP‐CVD. Some samples received an in situ rapid thermal oxidation immediately after stacked layer deposition to form oxide/nitride/oxide stacked layers. These films were characterized by ellipsometry, Fourier transform infrared spectroscopy, x‐ray photoelectron spectroscopy, and Auger electron spectroscopy. Results show that well‐defined Si3N4/SiO2 and Six Ny Oz /Si3N4/SiO2 stacked layers have been formed.

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Applied Physics Letters  (Volume:55 ,  Issue: 22 )