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Strained‐layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

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3 Author(s)
Larsson, A. ; Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 ; Cody, Jeffrey ; Lang, Robert J.

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Low threshold current density strained‐layer In0.2Ga0.8As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad‐area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (∼90%). The maximum external differential quantum efficiency is 70%, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain‐induced reduction of the valence‐band nonparabolicity and density of states are presented.

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Applied Physics Letters  (Volume:55 ,  Issue: 22 )