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A high‐resistivity layer formed beneath the silicon surface layer by using proton implantation and two‐step annealing is described. Rapid thermal annealing with tungsten halogen lamps was carried out during the first annealing step and the time of the high‐temperature treatment in the second annealing step was comparatively long. Experiments show that the quality of the top layer has been improved with the increase in surface Hall mobility of ∼25%. This novel semiconductor will likely be a new material for the manufacture of very high speed integrated circuits.