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Low‐energy electron diffraction intensity from crystallized Si film after solid phase epitaxial growth of its amorphous phase was measured. The intensity profile always shows a formation of 7×7 reconstructed structure, and the intensity I depends on the thickness of the amorphous Si film, d: the value of I from the crystallized film with d≪30 Å is the same as that from the 7×7 reconstructed Si (111) substrate; I decreases exponentially with the increase of d (30 Å≪d≪200 Å). The change of I is discussed from the viewpoint of the crystallization of the amorphous film composed of strongly distorted microcrystalline‐like grains which have a uniform orientation due to the proximity effect of the Si (111) substrate.