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Control of preferential orientation by in situ plasma supply during growth of polycrystalline silicon films

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3 Author(s)
Hasegawa, S. ; Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan ; Yamamoto, S. ; Kurata, Y.

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Polycrystalline silicon (poly‐Si) films were prepared on a fused quartz substrate at 700 °C by low‐pressure chemical vapor deposition (LPCVD) and plasma‐enhanced CVD (PECVD) using the same fabrication system. Poly‐Si films with a strong 〈100〉 and 〈110〉 preferential orientation (P.O.) are obtained by changing the rf power for generating the plasma under the same preparation condition. The surface of the PECVD films with dominant 〈100〉 and 〈110〉 textures is very smooth in contrast with that of LPCVD films. These textures are maintained after thermal oxidation at 1000 °C, and the degree of P.O. and the grain size increase.

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Applied Physics Letters  (Volume:55 ,  Issue: 2 )