By Topic

Monolithic integration of a thin and short metal‐semiconductor‐metal photodetector with a GaAlAs optical inverted rib waveguide on a GaAs semi‐insulating substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Vinchant, J.F. ; Centre Hyperfréquences et Semiconducteurs, U.A. CNRS 287, Université des Sciences et Techniques de Lille‐Flandres‐Artois, 59655 Villeneuve d’Ascq Cedex, France ; Vilcot, J.P. ; Lorriaux, J.L. ; Decoster, D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.102134 

The first fabrication of a thin and short GaAs metal‐semiconductor‐metal photodetector monolithically integrated with a GaAlAs optical inverted rib waveguide on a semi‐insulating GaAs substrate is reported. An only 0.2‐μm‐thick and 100‐μm‐long GaAs absorbing layer is needed to detect 90% of the optical signal at 0.85 μm wavelength. Static, dynamic, and noise measurements have been performed and a bandwidth in excess of 15 GHz is obtained.

Published in:

Applied Physics Letters  (Volume:55 ,  Issue: 19 )