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The first fabrication of a thin and short GaAs metal‐semiconductor‐metal photodetector monolithically integrated with a GaAlAs optical inverted rib waveguide on a semi‐insulating GaAs substrate is reported. An only 0.2‐μm‐thick and 100‐μm‐long GaAs absorbing layer is needed to detect 90% of the optical signal at 0.85 μm wavelength. Static, dynamic, and noise measurements have been performed and a bandwidth in excess of 15 GHz is obtained.