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Monolithic integration of a thin and short metal‐semiconductor‐metal photodetector with a GaAlAs optical inverted rib waveguide on a GaAs semi‐insulating substrate

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4 Author(s)
Vinchant, J.F. ; Centre Hyperfréquences et Semiconducteurs, U.A. CNRS 287, Université des Sciences et Techniques de Lille‐Flandres‐Artois, 59655 Villeneuve d’Ascq Cedex, France ; Vilcot, J.P. ; Lorriaux, J.L. ; Decoster, D.

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The first fabrication of a thin and short GaAs metal‐semiconductor‐metal photodetector monolithically integrated with a GaAlAs optical inverted rib waveguide on a semi‐insulating GaAs substrate is reported. An only 0.2‐μm‐thick and 100‐μm‐long GaAs absorbing layer is needed to detect 90% of the optical signal at 0.85 μm wavelength. Static, dynamic, and noise measurements have been performed and a bandwidth in excess of 15 GHz is obtained.

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Applied Physics Letters  (Volume:55 ,  Issue: 19 )