By Topic

Three-dimensional analytical solution of the Laplace equation suitable for semiconductor detector design

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Castoldi, A. ; Dipartimento di Fisica, Universita degli Studi, Milano, Italy ; Gatti, E. ; Rehak, P.

In this paper we present a method to obtain the three-dimensional (3-D) solution of the Laplace equation in closed form suitable for semiconductor detector design, The method applies to planar geometry cases (microstrip detectors, pixel detectors, drift detectors, etc.) with possible mixed boundary conditions on the surfaces of the wafer. The solution inside the detector volume is expressed by a series of elementary functions, The method requires lower CPU time and memory than methods based on 3-D discretization, in particular for the study of 3-D carrier trajectories inside the volume of semiconductor detectors and for inter-electrode capacitance calculations

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 1 )