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Virtually total suppression of carrier‐driven photochemical etching of semi‐insulating GaAs, n‐GaAs, and n+‐GaAs has been achieved by indiffusion of Zn to a surface carrier concentration greater than 1020/cm3. This technique for photochemical reaction suppression can be used as a self‐aligned etching technology for semiconductor device fabrication.
Published in:
Applied Physics Letters
(Volume:55
,
Issue:
11
)
Date of Publication: Sep 1989
- Page(s):
- 1127 - 1128
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.101678
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Sep 1989
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