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Browse Journals & Magazines > Applied Physics Letters ...> Volume:55 Issue:10 Help

Measurement of the fundamental modulation response of a semiconductor laser to millimeter wave frequencies by active‐layer photomixing

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2 Author(s)
Newkirk, Michael A. ; Department of Applied Physics, 128‐95, California Institute of Technology, Pasadena, California 91125 ; Vahala, K.J.

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The room‐temperature modulation response of a GaAs/GaAlAs semiconductor laser (relaxation resonance frequency, νR=6.5 GHz) is measured to 37 GHz using the active‐layer photomixing technique. The measured response function agrees with the theoretical ideal, and there is no indication of device parasitic effects. An ultrahigh‐finesse Fabry–Perot interferometer is used to detect the optical modulation, which appears as sidebands in the laser field spectrum. With a moderately faster laser diode (i.e., νR∼10 GHz), the modulation response should be measurable beyond 100 GHz.

Published in:
Applied Physics Letters  (Volume:55 ,  Issue: 10 )

Date of Publication: Sep 1989

Page(s):
939 - 941
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.101730
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 1989

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