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Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane

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4 Author(s)
Regolini, J.L. ; Centre National d’Etudes des Télécommunications, BP 98, 38243 Meylan Cedex, France ; Bensahel, D. ; Scheid, E. ; Mercier, J.

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Selective epitaxial silicon layers have been grown in a reduced pressure (≪2 Torr) reactor in the 650–1100 °C temperature range using only dichlorosilane (DCS) gas diluted in hydrogen. The growth rate plotted in Arrhenius coordinates (log G vs 1/T) shows an activation energy of 59 kcal/mol in the 650–800 °C range. A comparison is made between the DCS system and our previous results concerning the SiH4/HCl/H2 system.

Published in:

Applied Physics Letters  (Volume:54 ,  Issue: 7 )

Date of Publication:

Feb 1989

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