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The double‐heterostructure optoelectronic switch is demonstrated as a novel dynamic random access optoelectronic memory cell in an N‐channel self‐aligned three‐terminal configuration. The cell employs a single polarity of bias and XY selectivity using the inversion channel contact and the optical input/output port. The switching powers, delays, and refresh capability offer the promise for large‐scale integrated circuits.
Published in:
Applied Physics Letters
(Volume:54
,
Issue:
6
)
Date of Publication: Feb 1989
- Page(s):
- 543 - 545
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.100925
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Feb 1989
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