Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.100925
The double‐heterostructure optoelectronic switch is demonstrated as a novel dynamic random access optoelectronic memory cell in an N‐channel self‐aligned three‐terminal configuration. The cell employs a single polarity of bias and XY selectivity using the inversion channel contact and the optical input/output port. The switching powers, delays, and refresh capability offer the promise for large‐scale integrated circuits.