By Topic

Extraction method of the base series resistances in bipolar transistor in presence of current crowding

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
E. Dubois ; Inst. d'Electronique et de Microelectronique du Nord, Villeneuve d'Ascq, France ; P. H. Bricout ; E. Robilliart

This paper proposes a new method to determine the base resistance components and the base sheet resistance under forward bias conditions and in the presence of current crowding. Using bipolar transistors with two independent base contacts, the base sheet resistance R and the extrinsic resistance component RBx are first extracted. Accounting for current crowding, the total base resistance is subsequently calculated using an analytical analysis of the debiasing effects. The assessment of this method is accomplished by exercising the algorithm with current/voltage data generated by two dimensional numerical simulations. The simulated structure corresponds to an advanced npn transistor embedded in the QUBiC BiCMOS technology. The extracted quantities are directly compared to their strictly integrated counterparts determined from the internal current and voltage distributions

Published in:

IEEE Journal of Solid-State Circuits  (Volume:31 ,  Issue: 1 )