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Advanced modeling of distortion effects in bipolar transistors using the Mextram model

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6 Author(s)
N. De Vreede ; Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands ; H. C. De Graaff ; K. Mouthaan ; M. De Kok
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The modeling of distortion effects in bipolar transistors due to the onset of quasi-saturation is considered. Computational results obtained using the Mextram and Gummel-Poon models as implemented in a harmonic balance simulator are compared with measured results

Published in:

IEEE Journal of Solid-State Circuits  (Volume:31 ,  Issue: 1 )