By Topic

Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Nakatani, K. ; Advanced Film Products Laboratory, Teijin Limited, Asahigaoka Hino, Tokyo 191, Japan ; Ogasawara, M. ; Suzuki, K. ; Okaniwa, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.101431 

The electrical properties of hydrogenated amorphous silicon (a‐Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a‐Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a‐Si:H layer at 150 °C for 1 h while relaxed.

Published in:

Applied Physics Letters  (Volume:54 ,  Issue: 17 )