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The electrical properties of hydrogenated amorphous silicon (a‐Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a‐Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a‐Si:H layer at 150 °C for 1 h while relaxed.