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Observation of a two‐dimensional hole gas in boron‐doped Si0.5Ge0.5/Ge heterostructures

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2 Author(s)
Wagner, G.R. ; Westinghouse Research and Development Center, Pittsburgh, Pennsylvania 15235 ; Janocko, M.A.

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The Hall mobility and magnetoresistance of Si0.5Ge0.5/Ge heterostructures grown by molecular beam epitaxy have been studied in the temperature range 1.5≪T≪300 K. Shubnikov–de Haas oscillations observed at T=1.5 K indicate that selective doping of the alloy with boron generates a two‐dimensional hole gas in the Ge. The oscillation period yields a surface carrier density of 2×1012 cm-2, in reasonable agreement with the value of 3×1012 cm-2 obtained by Hall measurements. The mobility at T=4.2 K in a sample with an undoped alloy setback layer of 4 nm was μH=3.2×103 cm2/V s and in other samples was found to decrease with decreasing setback layer thickness.

Published in:

Applied Physics Letters  (Volume:54 ,  Issue: 1 )

Date of Publication:

Jan 1989

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