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Tunneling escape time of electrons from a quantum well under the influence of an electric field

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6 Author(s)
Norris, T.B. ; Laboratory for Laser Energetics, and Department of Physics and Astronomy, University of Rochester, 250 East River Road, Rochester, New York 14623‐1299 ; Song, X.J. ; Schaff, W.J. ; Eastman, L.F.
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We have performed time‐resolved photoluminescence on GaAs/AlxGa1-xAs single quantum well structures with an electric field applied perpendicular to the well plane. The quantum wells are coupled to the GaAs continuum through a thin barrier; the escape time of the electrons in the well was measured by time‐resolved photoluminescence. The dependence of the decay time on applied bias was found to agree very well with a simple semiclassical model.

Published in:

Applied Physics Letters  (Volume:54 ,  Issue: 1 )

Date of Publication:

Jan 1989

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