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Laser‐assisted photochemical etching of Hg0.8Cd0.2Te

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1 Author(s)
Bienstock, Rachelle J. ; Semiconductor Process and Design Center, Texas Instruments, P.O. Box 655936, M.S. 147, Dallas, Texas 75265

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.100833 

A laser‐assisted photochemically driven etching process has been developed for Hg0.8Cd0.2Te (12 μm material). It is an etch which does not melt the surface of the material or induce mercury migration. Small geometry features (vias less than 10 μm in diameter) with straight‐edged sidewalls have been produced. The etching mechanism is a photoenhanced rapid oxidation with subsequent solvation of the oxides.

Published in:

Applied Physics Letters  (Volume:54 ,  Issue: 1 )

Date of Publication:

Jan 1989

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