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Solid phase epitaxial regrowth of Si1-xGex/Si strained‐layer structures amorphized by ion implantation

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5 Author(s)
Chilton, B.T. ; Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4M1, Canada ; Robinson, B.J. ; Thompson, D.A. ; Jackman, T.E.
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Strained‐layer structures consisting of ∼30–35 nm Si1-xGex (x=0.16–0.29) and 33 nm Si deposited by molecular beam epitaxy on a (100)Si substrate have been amorphized by ion implantation at 40 K with 120 keV As+. Rutherford backscattering/channeling measurements using 2 MeV He+ ions have been used to measure the thickness of the amorphous layer and monitor the subsequent epitaxial regrowth occurring as a result of annealing at 560–600 °C. Angular scans across the {110} planar channels indicate that the initial crystallinity and strain was recovered for x=0.16; however, for x=0.29 crystal quality was greatly reduced and the coherency at the substrate‐alloy layer interface was destroyed.

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Applied Physics Letters  (Volume:54 ,  Issue: 1 )