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Low‐temperature mobility of two‐dimensional electron gas in selectively doped pseudomorphic N‐AlGaAs/GaInAs/GaAs structures

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4 Author(s)
Ohno, H. ; Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo 060, Japan ; Luo, J.K. ; Matsuzaki, K. ; Hasegawa, H.

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Low‐field mobility of two‐dimensional electron gas (2DEG) in selectively doped pseudomorphic N‐Al0.3Ga0.7As/ Ga0.8In0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low‐field mobility of 2DEG at low temperature (≪40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.

Published in:

Applied Physics Letters  (Volume:54 ,  Issue: 1 )