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Fractional quantum Hall effect in a high‐mobility GaAs/AlxGa1-xAs multiple quantum well heterostructure

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5 Author(s)
Shayegan, M. ; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 ; Wang, J.K. ; Santos, M. ; Sajoto, T.
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We report the realization of a high mobility [μ≂4.8×105 cm2/(V s)] selectively doped GaAs/AlxGa1-xAs multiple quantum well structure with low density (ns ≂1.7×1011 cm-2 for each of the 85 wells) grown by molecular beam epitaxy. The activation energy for the fractional quantum Hall state at the Landau‐level filling factor ν=1/3 is Δ≂2 K, the highest value ever reported for any multiple quantum well structure. Such a structure is nearly ideal for studies of the thermal properties of the two‐dimensional electron system in the fractional quantum Hall regime.

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Applied Physics Letters  (Volume:54 ,  Issue: 1 )