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High quality GaAs films with dislocation densities of 1–2×106 cm-2 on (100)Si substrates have been obtained for combination of strained‐layer superlattice insertion and thermal cycle growth using the metalorganic chemical vapor deposition method. In this letter, remarkable reduction effects of dislocation density in the GaAs layers due to InGaAs/GaAs and InGaAs/GaAsP strained‐layer superlattice insertion on Si have been analyzed by calculating the dislocation force exerted by the misfit due to the strained‐layer superlattice insertions. Threshold layer thickness needed for dislocation reduction and critical thickness for dislocation generation have been clarified for several strained‐layer superlattice systems.