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Ultrafast carrier dynamics in modified semiconductor‐doped glass

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2 Author(s)
Zheng, J.P. ; Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Amherst, New York 14260 ; Kwok, H.S.

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The recombination lifetime in CdSx Se1-x semiconductor‐doped glass was measured by time‐resolved photoluminescence. It was found that long‐term exposure of the glass to high‐intensity laser pulses produced a permanent reduction of the free‐carrier lifetime from 80 ps to less than 10 ps. This change could be reversed by thermal annealing and should have applications to ultrafast optical signal processing.

Published in:

Applied Physics Letters  (Volume:54 ,  Issue: 1 )