Cart (Loading....) | Create Account
Close category search window
 

Electrical transport properties in epitaxial codeposited CoSi2 layers on 〈111〉 Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Duboz, J.Y. ; Centre National d’Etudes des Télecommunications, BP 98, F‐38243 Meylan Cedex, France ; Badoz, P.A. ; Rosencher, E. ; Henz, J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.100560 

Electrical measurements (resistivity, Hall effect, and superconducting critical temperature) are performed in epitaxial CoSi2 layers obtained by room‐temperature codeposition of Co and Si on 〈111〉 Si subsequently annealed between 250 and 650 °C. On the one hand, the CoSi2 layers annealed at low temperature (250–350 °C) exhibit poorer electrical characteristics than the films realized by solid phase epitaxy at 650 °C, because of both a lack of carriers and a degraded mobility. A possible origin of this fact could be the presence of unreacted Co atoms in the metal layer. On the other hand, the films annealed ex situ at 700 °C show excellent electrical characteristics, together with mirror‐like surfaces and extremely smooth Si/CoSi2 interfaces, for silicide thicknesses ranging from 35 up to 500 Å. Furthermore, by comparing the films obtained by the solid phase epitaxy and the codeposition techniques, we show that the long‐range roughness (few hundreds of angstroms) has no major influence on the steep increase of resistivity with decreasing film thicknes observed in ultrathin CoSi2 layers.

Published in:

Applied Physics Letters  (Volume:53 ,  Issue: 9 )

Date of Publication:

Aug 1988

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.