Cart (Loading....) | Create Account
Close category search window

Cathodoluminescence of oval defects in GaAs/AlxGa1-xAs epilayers using an optical fiber light collection system

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hoenk, Michael E. ; Department of Applied Physics, 128‐95, California Institute of Technology, Pasadena, California 91125 ; Vahala, K.J.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A cathodoluminescence system using a novel optical fiber light collection system is employed to study oval defects in GaAs/Alx Ga1-x As epilayers grown by molecular beam epitaxy. Spatially and spectrally resolved data on the luminescence of oval defects are presented. Oval defects are found to contain an enhanced concentration of gallium, which is consistent with current theories regarding the origin of these defects.

Published in:

Applied Physics Letters  (Volume:53 ,  Issue: 21 )

Date of Publication:

Nov 1988

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.