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Cathodoluminescence of oval defects in GaAs/AlxGa1-xAs epilayers using an optical fiber light collection system

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2 Author(s)
Hoenk, Michael E. ; Department of Applied Physics, 128‐95, California Institute of Technology, Pasadena, California 91125 ; Vahala, K.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.100319 

A cathodoluminescence system using a novel optical fiber light collection system is employed to study oval defects in GaAs/Alx Ga1-x As epilayers grown by molecular beam epitaxy. Spatially and spectrally resolved data on the luminescence of oval defects are presented. Oval defects are found to contain an enhanced concentration of gallium, which is consistent with current theories regarding the origin of these defects.

Published in:

Applied Physics Letters  (Volume:53 ,  Issue: 21 )

Date of Publication:

Nov 1988

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