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New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma

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5 Author(s)
Mizuno, B. ; Matsushita Electric Industrial Co., Ltd., Yagumo‐nakamachi, Moriguchi, Osaka 570, Japan ; Nakayama, I. ; Aoi, N. ; Kubota, M.
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A new doping method for the vertical sidewall of a trench by electron cyclotron resonance plasma is described. The plasma was produced under a pressure of 5×10-4 Torr. A doped layer was formed uniformly along the sidewall of a trench with subhalf micron width and an aspect ratio of 6.2. By using a de‐ionized water cooling system, the wafer temperature was maintained below 120 °C and the boron dopant was introduced without damage to the photoresist.

Published in:

Applied Physics Letters  (Volume:53 ,  Issue: 21 )

Date of Publication:

Nov 1988

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