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Browse Journals & Magazines > Applied Physics Letters ...> Volume:53 Issue:1 Help

Grain growth of 〈100〉 textured Ge on a SiO2/Si3N4 stripe

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3 Author(s)
Ogura, Atsushi ; Fundamental Research Laboratories, NEC Corporation, Miyazaki 4‐1‐1, Miyamae‐ku, Kawasaki 213, Japan ; Aizaki, Naoaki ; Terao, Hiroshi

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Grain growth enhancement in 〈100〉 textured Ge on a SiO2/Si3N4 stripe was investigated. Transmission electron microscope observation revealed 7‐μm‐diam (100) grains on a 1 μm periodic stripe after 20 h of 900 °C annealing. It is thought that the SiO2/Si3N4 stripe enhanced a grain growth similar to the grooved SiO2 case. However, since the stripe had no surface step, no grain growth interruptions were found at stripe boundaries.

Published in:
Applied Physics Letters  (Volume:53 ,  Issue: 1 )

Date of Publication: Jul 1988

Page(s):
22 - 24
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.100570
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jul 1988

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