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Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111)

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1 Author(s)
Shigeta, Y. ; Department of Physics, Yokohama City University, Seto, Yokohama, Kanagawa 236, Japan

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Some surface structure change of an amorphous Si film deposited on Si (111) during the solid phase epitaxy was observed by low‐energy electron diffraction (LEED). The LEED intensity profile shows the formation of 7×7 structure whenever a crystallized surface is constructed. The intensity increases with an increase of the annealing temperature Ta, where the increasing rate with Ta becomes small for 590≪Ta≪700 °C, and for 780≪Ta≪850 °C. It is discussed that there exists some process inhibiting the growth of the 7×7 structure regions in these two temperature ranges.

Published in:

Applied Physics Letters  (Volume:52 ,  Issue: 8 )

Date of Publication:

Feb 1988

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