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Interface degradation in Si‐metal‐oxide‐semiconductor structures by homogeneous, microwave heating of channel carriers

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5 Author(s)
Qiu‐Yi, Ye ; Physik‐Department der Technischen Universität München, D‐8046 Garching, Federal Republic of Germany ; Zrenner, A. ; Koch, F. ; Zeller, C.
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Using a pulsed microwave source to provide a strong lateral electric field in a Si‐metal‐oxide‐semiconductor structure, we observe interface degradation by hot holes. Damage occurs in a two‐step process. Holes are trapped in the oxide at low temperature and are subsequently converted into interface states in an annealing step at room temperature.

Published in:

Applied Physics Letters  (Volume:52 ,  Issue: 7 )

Date of Publication:

Feb 1988

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