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Long minority hole diffusion length and evidence for bulk radiative recombination limited lifetime in InP/InGaAs/InP double heterostructures

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2 Author(s)
Gallant, M. ; Bell–Northern Research, Ltd., P.O. Box 3511, Station C, Ottawa, Ontario K1Y 4H7, Canada ; Zemel, A.

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Minority hole diffusion length, lifetime, and mobility for undoped InGaAs were measured at 297 and 77 K in metalorganic chemical vapor deposited InP/InGaAs/InP double heterostructures using continuous‐wave and pulsed optical beam induced current techniques. A hole diffusion length Lp=140 μm, a lifetime τp=18.5 μs, and a mobility μp=425 cm2/(V s) were obtained at room temperature. To the best of our knowledge, these properties are the highest reported values for InGaAs. The measured carrier lifetime and its temperature dependence are consistent with bulk radiative recombination in undoped InGaAs.

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Applied Physics Letters  (Volume:52 ,  Issue: 20 )