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A spatially resolved electron beam technique, remote contact electron beam induced current, has been developed to detect and map charge‐separating defects in HgCdTe with two remote sample contacts. This technique, characterized by a high spatial resolution, ∼1 μm, and a high sensitivity (signal/noise) to fields produced by inclusions, damage, dislocations, strain, p‐n junctions, and possibly compositional (band gap) and doping variations, shows promise for analyzing materials, passivation coatings, and diode arrays without making contacts to the individual devices.