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Sputter deposition of YBa2Cu3O7-x films using a hemispherical target in a Hg vapor triode plasma

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4 Author(s)
Wehner, G.K. ; Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 ; Kim, Y.H. ; Kim, D.H. ; Goldman, A.M.

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High‐quality stoichiometric films of YBa2 Cu3 O7-x have been grown epitaxially on SrTiO3 substrates by sputtering from a stoichiometric target of hemispherical shape using a Hg vapor triode plasma. Films exhibited superconducting transitions of a width ΔT∼2.5 K, with zero resistance being achieved at 89 K. From both the x rays and the temperature dependence of the normal‐state electrical resistance it can be inferred that the films contain an admixture of domains with either the c or a axes normal to the plane.

Published in:

Applied Physics Letters  (Volume:52 ,  Issue: 14 )

Date of Publication:

Apr 1988

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