By Topic

Very shallow p+‐n junction formation by low‐energy BF+2 ion implantation into crystalline and germanium preamorphized silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ozturk, M.C. ; North Carolina State University, Electrical and Computer Engineering Department, Raleigh, North Carolina 27695‐7911 ; Wortman, J.J. ; Fair, R.B.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.99242 

Very low energy (6 keV) BF+2 ion implantation has been used to form very shallow (≤1000 Å) junctions in crystalline and Ge+ preamorphized Si. Low‐temperature furnace annealing was used to regrow the crystal, and rapid thermal annealing was used for dopant activation and radiation damage removal. In preamorphized samples, Ge+ implantation parameters were found to have an influence on B diffusion. Our results show that for temperatures higher than 950 °C, B diffusion, rather than B channeling, becomes the dominant mechanism in determining the junction depth. Computer simulations of the profiles show regions of retarded and enhanced B diffusion, which depend on surface and end‐of‐range damage, respectively.

Published in:

Applied Physics Letters  (Volume:52 ,  Issue: 12 )