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Very shallow p+‐n junction formation by low‐energy BF+2 ion implantation into crystalline and germanium preamorphized silicon

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3 Author(s)
Ozturk, M.C. ; North Carolina State University, Electrical and Computer Engineering Department, Raleigh, North Carolina 27695‐7911 ; Wortman, J.J. ; Fair, R.B.

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Very low energy (6 keV) BF+2 ion implantation has been used to form very shallow (≤1000 Å) junctions in crystalline and Ge+ preamorphized Si. Low‐temperature furnace annealing was used to regrow the crystal, and rapid thermal annealing was used for dopant activation and radiation damage removal. In preamorphized samples, Ge+ implantation parameters were found to have an influence on B diffusion. Our results show that for temperatures higher than 950 °C, B diffusion, rather than B channeling, becomes the dominant mechanism in determining the junction depth. Computer simulations of the profiles show regions of retarded and enhanced B diffusion, which depend on surface and end‐of‐range damage, respectively.

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Applied Physics Letters  (Volume:52 ,  Issue: 12 )