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Nucleation and initial growth of GaAs on Si substrate

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3 Author(s)
Rosner, S.J. ; Hewlett–Packard Laboratories, Palo Alto, California 94304 ; Koch, S.M. ; Harris, J.S., Jr.

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The microstructure of thin layers of GaAs grown on Si substrates at low growth temperatures by molecular beam epitaxy was examined using transmission electron microscopy and MeV 4He+ ion channeling angular scan analysis. Crystalline island formation is observed at temperatures as low as 325 °C, with epitaxial orientation and distinct nucleation habits apparently tied to the symmetry of the misoriented substrate. For films with no exposure to temperatures above 405 °C, the planar strain is found to be compressive, up to a thickness of 100 nm.

Published in:

Applied Physics Letters  (Volume:49 ,  Issue: 26 )