Spatial retardation of carrier heating in scaled 0.1-/spl mu/m n-MOSFET's using Monte Carlo simulations

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 /spl mu/m n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V/sub d/ considerably less than the Si/SiO/sub 2/ injection barrier height /spl phi//sub b/. Simulation of both devices reveal that 1) although qV/sub d/