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Evaluation of turn-on performance of P-i-N rectifiers and IGBT's under zero voltage switching

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2 Author(s)
Pendharkar, S. ; Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA ; Shenai, K.

This paper compares the turn-on performance of two vertical power bipolar devices, viz, P-I-N diode and IGBT, under Zero Voltage Switching (ZVS). Although both the devices are “conductivity modulated” during turn-on, the IGBT carrier dynamics distinctly differ from that of a P-i-N rectifier. It is shown that, for identical drift region parameters, the conductivity modulation in the IGBT is significantly lower compared to that in a P-i-N rectifier mainly because of carrier flow constraints in the IGBT and the inherent bipolar transistor-like carrier distribution in the IGBT. 2-D mixed device and circuit simulations were performed to understand the behavior of the two devices during turn-on under ZVS. The mixed device and circuit simulator was also used to study the effects of variations in the rate of change of current (di/dt) through the device during turn-on, carrier lifetime and temperature on the turn-on behavior of the two bipolar devices under ZVS

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Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 4 )