Referenced Items are not available for this document.
An explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented. Under quasistatic operation conditions analytical and C∞-continuous equations are derived for all transistor large and small-signal parameters. Short-channel effects have been included. The calculated characteristics show good agreement with measurements and smooth transitions between regions of operation
Published in:
Electron Devices, IEEE Transactions on
(Volume:43
,
Issue:
4
)
Date of Publication: Apr 1996
- Page(s):
- 568 - 575
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5251669
- Digital Object Identifier :
- 10.1109/16.485539
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1996
- Sponsored by :
- IEEE Electron Devices Society
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