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Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon

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2 Author(s)
Jackson, W.B. ; Xerox Palo Alto Research Center, Palo Alto, California 94304 ; Stutzmann, M.

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Annealing of metastable dangling bond defects in light‐soaked undoped hydrogenated amorphous silicon (a‐Si:H) is investigated in samples which have been illuminated at different temperatures. Based on a monomolecular annealing model, the distribution of activation energies is determined. The annealing distribution narrows and shifts to higher energies as the temperature during illumination is increased.

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Applied Physics Letters  (Volume:49 ,  Issue: 15 )