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Browse Journals & Magazines > Applied Physics Letters ...> Volume:49 Issue:13 Help

Interaction of low‐energy implanted atomic H with slow and fast diffusing metallic impurities in Si

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3 Author(s)
Singh, Ranbir ; Engineering Science Program, Pennsylvania State University, University Park, Pennsylvania 16802 ; Fonash, S.J. ; Rohatgi, A.

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The interaction of hydrogen, injected into silicon using low‐energy ion bombardment, with slow (Ti and V) and fast (Cr and Au) diffusing impurities was investigated. It was found that this H ion bombardment of the Si surface was effective in reducing the electrically active concentration of only the fast diffusing impurities. The results are explained by damage enhanced diffusivity and surface gettering of the fast diffusing impurities.

Published in:
Applied Physics Letters  (Volume:49 ,  Issue: 13 )

Date of Publication: Sep 1986

Page(s):
800 - 802
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.97551
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 1986

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