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Patterning of fine structures in silicon dioxide layers by ion beam exposure and wet chemical etching

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4 Author(s)
Cleaver, J.R.A. ; Cambridge University, Department of Physics, Microelectronics Research Laboratory, Cambridge Science Park, Milton Road, Cambridge CB4 4FW, Great Britain ; Heard, P.J. ; Evason, A.F. ; Ahmed, H.

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Fine structures can be fabricated in silicon dioxide layers by a two‐stage process in which localized ion implantation enhances the rate at which the oxide can be etched chemically. This process has been investigated as a technique for maskless microfabrication using a scanning ion beam lithography system.

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Applied Physics Letters  (Volume:49 ,  Issue: 11 )