By Topic

Patterning of fine structures in silicon dioxide layers by ion beam exposure and wet chemical etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Cleaver, J.R.A. ; Cambridge University, Department of Physics, Microelectronics Research Laboratory, Cambridge Science Park, Milton Road, Cambridge CB4 4FW, Great Britain ; Heard, P.J. ; Evason, A.F. ; Ahmed, H.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Fine structures can be fabricated in silicon dioxide layers by a two‐stage process in which localized ion implantation enhances the rate at which the oxide can be etched chemically. This process has been investigated as a technique for maskless microfabrication using a scanning ion beam lithography system.

Published in:

Applied Physics Letters  (Volume:49 ,  Issue: 11 )