By Topic

Direct measurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers in amorphous silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Lowndes, D.H. ; Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 ; Jellison, G.E., Jr. ; Pennycook, S.J. ; Withrow, S.P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser‐induced ‘‘explosively’’ propagating buried molten layers in ion implantation‐amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling‐velocity relationship of ∼14 K/(m/s). Z‐contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was ≪15 nm.

Published in:

Applied Physics Letters  (Volume:48 ,  Issue: 20 )