Cart (Loading....) | Create Account
Close category search window
 

Observations on intensity oscillations in reflection high‐energy electron diffraction during epitaxial growth of Si(001) and Ge(001)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Aarts, J. ; Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands ; Gerits, W.M. ; Larsen, P.K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.96662 

Intensity oscillations have been found in the specular beam of reflection high‐energy electron diffraction patterns during growth of Si(001) and Ge(001) by molecular beam epitaxy. The reported results demonstrate the dependence of the amplitude and damping of the oscillations on different parameters such as substrate temperature, electron beam angle of incidence, and azimuth.

Published in:

Applied Physics Letters  (Volume:48 ,  Issue: 14 )

Date of Publication:

Apr 1986

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.