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Detection of Ga vacancies in electron irradiated GaAs by positrons

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5 Author(s)
Hautojarvi, P. ; Centre de’Etudes Nucléaires de Grenoble, Service de Physique 85 X, 38041 Grenoble Cédex, France ; Moser, P. ; Stucky, M. ; Corbel, C.
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Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.

Published in:

Applied Physics Letters  (Volume:48 ,  Issue: 12 )

Date of Publication:

Mar 1986

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