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Far‐infrared emission from two‐dimensional plasmons in AlGaAs/GaAs heterointerfaces

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3 Author(s)
Okisu, Noriyuki ; Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan ; Sambe, Yasuo ; Kobayashi, Takeshi

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A modified dispersion formula describing two‐dimensional (2D) plasmons in AlGaAs/GaAs heterointerfaces was derived and its validity was experimentally checked by observation of the far‐infrared signal from grating coupled 2D plasmons in selectively doped AlGaAs/GaAs heterointerfaces. The plasmon resonance frequency shift towards higher energy observed by Höpfel et al. [Surf. Sci. 113, 118 (1982)] can be explained by our present dispersion formula.

Published in:

Applied Physics Letters  (Volume:48 ,  Issue: 12 )